ds31034 rev. 8 - 2 1 of 3 MMBTH24 www.diodes.com diodes incorporated MMBTH24 npn surface mount vhf/uhf transistor designed for vhf/uhf amplifier applications and high output vhf oscillators high current gain bandwidth product ideal for mixer and rf amplifier applications with collector currents in the 100 a - 30 ma range also available in lead free version characteristic symbol MMBTH24 unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 4.0 v collector current - continuous (note 1) i c 50 ma power dissipation (note 1) p d 300 mw thermal resistance, junction to ambient (note 1) r ja 417 c/w operating and storage and temperature range t j ,t stg -55 to +150 c maximum ratings @ t a = 25 c unless otherwise specified a e j l top view m b c h g d k c b e mechanical data case: sot-23, molded plastic case material - ul flammability rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish). please see ordering information, note 4, on page 2 terminal connections: see diagram marking (see page 2): k3z ordering & date code information: see page 2 weight: 0.008 grams (approx.) note: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. short duration test pulse used to minimize self-heating effect. electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 2) collector-emitter breakdown voltage v (br)ceo 40 v i c = 1ma, i b = 0 collector-base breakdown voltage v (br)cbo 40 v i c = 100 a, i e = 0 emitter-base breakdown voltage v (br)ebo 4.0 v i e = 10 a, i c = 0 collector cutoff current i cbo 100 na v cb = 30v, i e = 0 emitter cutoff current i ebo 100 na v eb = 2v, i c = 0 on characteristics (note 2) dc current gain h fe 30 i c = 8ma, v ce = 10.0v collector-emitter saturation voltage v ce(sat) 0.5 v i c = 4ma, i b = 400 a base-emitter on voltage v be(sat) 0.95 v i c = 4ma, v ce = 10.0v small signal characteristics current-gain-bandwidth product f t 400 mhz v ce = 10v, f = 100mhz, i c = 8ma collector-base capacitance c cb 0.7 pf v cb = 10v, f = 1.0mhz, i e = 0 collector-base feedback capacitiance c rb 0.65 pf v cb = 10v, f = 1.0mhz, i e = 0 collector-base time constant rb?cc 9ps i c = 4ma v cb = 10v, f =31.8mhz sot-23 dim min max a 0.37 0.51 b 1.20 1.40 c 2.30 2.50 d 0.89 1.03 e 0.45 0.60 g 1.78 2.05 h 2.80 3.00 j 0.013 0.10 k 0.903 1.10 l 0.45 0.61 m 0.085 0.180 0 8 all dimensions in mm e b c features
ds31034 rev. 8 - 2 2 of 3 MMBTH24 www.diodes.com month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd date code key k3z = product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september k3z ym marking information notes: 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. for lead free version (with lead free terminal finish) part number, please add "-f" suffix to part number above. example: MMBTH24-7-f. device packaging shipping MMBTH24-7 sot-23 3000/tape & reel (note 3) ordering information year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code jklmnpr st u vw 1 10 1000 v,c o llect o rt o emitter ce(sat) saturation voltage (v) i , collector current (ma) c fig. 2 collector emitter saturation voltage vs. collector current t = 25c a t = -50c a t = 150c a 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.14 0.15 0.18 0.17 0.16 0.20 0.19 i c i b = 10 0 50 100 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) a fig. 1, max power dissipation vs ambient tem p erature 150 200 250 300 350 0 0.1 1 10 1000 v , base emitter v o ltage (v) be(on) i , collector current (ma) c fig. 4 base emitter voltage vs. collector current t= 25c a t= -50c a t=150c a 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.90 0.85 1.00 0.95 v@v = 5v be(on) ce 1 10 100 1000 1 10 100 v = 5v ce h , dc current gain (normalized) fe i , collector current (ma) c fi g . 3, dc current gain vs. collector current t= 25c a t= -50c a t = 150c a
ds31034 rev. 8 - 2 3 of 3 MMBTH24 www.diodes.com 1 10 100 1000 10000 1 10 100 f , gain bandwidth product (mhz) t i , collector current (ma) c fi g . 5, gain bandwidth product vs collector current v= 5v ce
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